POWER MOSFET, N CHANNEL, 60 V, 240 A, 0.00115 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | FET Type | Power Dissipation (Max) [Max] | Package / Case | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 354 nC | MOSFET (Metal Oxide) | N-Channel | 375 W | D2PAK TO-263-7 | Surface Mount | 20 V | -55 °C | 175 ░C | 3.7 V | 12960 pF | 6 V 10 V | 60 V | PG-TO263-7 | 240 A | 1.4 mOhm |
Infineon Technologies | 411 nC | MOSFET (Metal Oxide) | N-Channel | 375 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 20 V | -55 °C | 175 ░C | 3.7 V | 13703 pF | 6 V 10 V | 60 V | PG-TO263-2 | 195 A | 2 mOhm |