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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Rds On (Max) | Package Name | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Mounting Type | FET Type | Gate Charge (Max) | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 55 mOhm | DSN1006-3 | 7 W 480 mW | 4.5 V | 1.8 V | 420 pF | 30 V | 12 V | 1.1 V | -55 °C | 150 °C | 3.5 A | Surface Mount | N-Channel | 7.5 nC | MOSFET (Metal Oxide) | 3-XFDFN |