Beta
⌘K
POWER MOSFET, N CHANNEL, 30 V, 17.2 A, 0.0056 OHM, SOIC, SURFACE MOUNT
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 17.2 A | 2.2 V | MOSFET (Metal Oxide) | 5.6 mOhm | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | Surface Mount | 36 nC | 30 V | 2.5 W | 2910 pF | 20 V | 4.5 V 10 V | -55 °C | 150 °C | 8-SO |