MUR40010 Series

Catalog

DIODE MODULE GP 100V 200A 2TOWER

Part	Current - Reverse Leakage	Technology	Diode Pair Count	Diode Configuration	Package Name	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Mounting Type	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)
GeneSiC Semiconductor MUR40010CT	25 µA	Standard	1 pair	Common Cathode	Twin Tower	200 A	500 ns	200 mA	90 ns	100 V	1.3 V	Chassis Mount	Twin Tower
GeneSiC Semiconductor MUR40010CT	25 µA	Standard	1 pair	Common Cathode	Twin Tower	200 A	500 ns	200 mA	90 ns	100 V	1.3 V	Chassis Mount	Twin Tower
GeneSiC Semiconductor MUR40010CTR	25 µA	Standard	1 pair	Common Anode	Twin Tower	200 A	500 ns	200 mA	90 ns	100 V	1.3 V	Chassis Mount	Twin Tower	150 °C	-55 °C
GeneSiC Semiconductor MUR40010CTR	25 µA	Standard	1 pair	Common Anode	Twin Tower	200 A	500 ns	200 mA	90 ns	100 V	1.3 V	Chassis Mount	Twin Tower	150 °C	-55 °C