MOSFET 2N-CH 20V 7A 8SO
| Part | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs | Configuration | Technology | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 20 nC | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | 8-SO | -55 °C | 150 °C | 2 W | Logic Level Gate | 7 A | 30 mOhm | 1.2 V | 1340 pF | ||
Infineon Technologies | 12 V | 8-SOIC | 3.9 mm | 0.154 in | N and P-Channel | MOSFET (Metal Oxide) | Surface Mount | 8-SO | -55 °C | 150 °C | 2 W | Logic Level Gate | 3 A 6.3 A | 1.5 V | 640 pF | 34 mOhm | 8.6 nC | ||
Infineon Technologies | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 20 nC | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | 8-SO | -55 °C | 150 °C | 2 W | Logic Level Gate | 7 A | 30 mOhm | 1.2 V | 1340 pF | ||
Infineon Technologies | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 20 nC | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | 8-SO | -55 °C | 150 °C | 2 W | Logic Level Gate | 7 A | 30 mOhm | 1.2 V | 1340 pF | ||
Infineon Technologies | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 20 nC | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | 8-SO | -55 °C | 150 °C | 2 W | Logic Level Gate | 7 A | 30 mOhm | 1.2 V | 1340 pF |