MOSFET N-CH 60V 56A DPAK
| Part | Power Dissipation (Max) [Max] | Mounting Type | Qualification | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Grade | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 110 W | Surface Mount | AEC-Q101 | 4 V | MOSFET (Metal Oxide) | 69 nC | 20 V | 60 V | 2290 pF | -55 °C | 175 ░C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 56 A | Automotive | 8.4 mOhm | 10 V | TO-252AA (DPAK) | N-Channel |