BUK9M Series
Manufacturer: Nexperia USA Inc.
MOSFET 2N-CH 65V 7.1A 20SO
| Part | Current - Continuous Drain (Id) (Tc) | Technology | Package Name | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Package Length | Package Width | FET Feature | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Channel Count | Configuration | Configuration - Features | Power - Max (Tc) | Mounting Type | Vgs(th) (Max) | Current - Continuous Drain (Id) (Tc) (2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 7.1 A | MOSFET (Metal Oxide) | 20-SO 20-SOIC | 65 V | -55 °C | 150 °C | 32.8 mOhm | 0.295 in | 7.5 mm | Logic Level Gate | 15 nC | 1180 pF 1180 pF | 2 | N-Channel | Dual | 3.57 W | Surface Mount | 2 V | |
Nexperia USA Inc. | 11.6 A | MOSFET (Metal Oxide) | 20-SO 20-SOIC | 65 V | -55 °C | 150 °C | 15.5 mOhm | 0.295 in | 7.5 mm | Logic Level Gate | 30.8 nC | 2660 pF | 2 | N-Channel | Dual | 4.4 W | Surface Mount | 2 V | |
Nexperia USA Inc. | 3.8 A | MOSFET (Metal Oxide) | 20-SO 20-SOIC | 65 V | -55 °C | 150 °C | 90.4 mOhm 90.4 mOhm | 0.295 in | 7.5 mm | Logic Level Gate | 6.3 nC | 535 pF | 2 | N-Channel | Dual | 3.15 W | Surface Mount | 2 V | |
Nexperia USA Inc. | 15 A | MOSFET (Metal Oxide) | 20-SO 20-SOIC | 65 V | -55 °C | 150 °C | 10.6 mOhm | 0.295 in | 7.5 mm | Logic Level Gate | 44.6 nC | 3643 pF | 2 | N-Channel | Dual | 5 W | Surface Mount | 2 V | |
Nexperia USA Inc. | 16.9 A | MOSFET (Metal Oxide) | 20-SO 20-SOIC | 55 V | -55 °C | 150 °C | 9 mOhm 22.6 mOhm | 0.295 in | 7.5 mm | Logic Level Gate | 54 nC | 2315 pF 5178 pF | 2 | N-Channel | Dual | 3.9 W 5.2 W | Surface Mount | 2 V | 9.16 A |
Nexperia USA Inc. | MOSFET (Metal Oxide) | 20-SO 20-SOIC | 55 V | 13.8 mOhm | 0.295 in | 7.5 mm | Logic Level Gate | 2 | N-Channel | Dual | Surface Mount |