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OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 14.6 MOHM;
| Part | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.5 W 52 W | 10 A 44 A | MOSFET (Metal Oxide) | 10 nC | -55 °C | 150 °C | 8-PowerTDFN | Surface Mount | 100 V | 4.5 V 10 V | N-Channel | PG-TDSON-8-6 | 1300 pF | 14.6 mOhm | 20 V | 2.3 V |