GANFET N-CH 650V 3.6A 3PQFN
| Part | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Transphorm TP65H480G4JSG-TR | 18 V | N-Channel | 8 V | Surface Mount | 9 nC | -55 °C | 150 °C | 760 pF | 650 V | 13.2 W | GaNFET (Cascode Gallium Nitride FET) | 3.6 A | 2.8 V | 3-PowerTDFN |