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DIODE SIL CARBIDE 650V 28A 4QFN
| Part | Package / Case | Mounting Type | Speed | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Capacitance @ Vr, F | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed | 4-PowerVQFN | Surface Mount | No Recovery Time | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V 8 A | 175 ░C | -55 C | 4-QFN (8x8) | 518 pF | 28 A | 20 µA |