RES 36.5K OHM 1/4W 1% AXIAL
| Part | Tolerance | Failure Rate | Power (Watts) | Power (Watts) | Operating Temperature [Min] | Operating Temperature [Max] | Size / Dimension [diameter] | Size / Dimension [z] | Size / Dimension [diameter] | Size / Dimension [z] | Supplier Device Package | Resistance | Number of Terminations | Package / Case | Composition | Temperature Coefficient |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1 % | R (0.01%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 36.5 kOhms | 2 | Axial | Metal Film | 100 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | S (0.001%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 162 kOhms | 2 | Axial | Metal Film | 50 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | P | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 274 kOhms | 2 | Axial | Metal Film | 25 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | R (0.01%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 294 Ohms | 2 | Axial | Metal Film | 25 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | S (0.001%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 1 MOhms | 2 | Axial | Metal Film | 100 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | R (0.01%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 3.57 kOhms | 2 | Axial | Metal Film | 50 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | S (0.001%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 113 Ohms | 2 | Axial | Metal Film | 50 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | S (0.001%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 365 kOhms | 2 | Axial | Metal Film | 50 ppm/°C |
Vishay General Semiconductor - Diodes Division | 0.1 % | R (0.01%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 4.99 kOhms | 2 | Axial | Metal Film | 25 ppm/°C |
Vishay General Semiconductor - Diodes Division | 1 % | S (0.001%) | 0.25 W | 250 mW | -65 ░C | 347 °F | 2.46 mm | 7.11 mm | 0.097 in | 0.28 " | Axial | 316 kOhms | 2 | Axial | Metal Film | 100 ppm/°C |