N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 4.5 V 10 V | -55 °C | 150 °C | 3 V | 40 V | MOSFET (Metal Oxide) | N-Channel | SOT-23-3 | 42 mOhm | Surface Mount | 12.5 nC | 4.6 A | SC-59 SOT-23-3 TO-236-3 | 20 V | AEC-Q101 | 574 pF | Automotive |
Diodes Inc | 4.5 V 10 V | -55 °C | 150 °C | 3 V | 40 V | MOSFET (Metal Oxide) | N-Channel | SOT-23-3 | 42 mOhm | Surface Mount | 12.5 nC | 4.6 A | SC-59 SOT-23-3 TO-236-3 | 20 V | AEC-Q101 | 574 pF | Automotive |