BCX5616Q Series

NPN, 80V, 1A, SOT89

Catalog

NPN, 80V, 1A, SOT89

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic
Diodes Inc BCX5616QTA	100 nA	150 MHz	1 A	SOT-89-3	Surface Mount	80 V	100	TO-243AA	2 W	NPN	150 °C	-65 °C	500 mV

Catalog

NPN, 80V, 1A, SOT89

Key Features

• BVCEO > 80V

• Ic = 1A High Continuous Collector Current

• ICM = 2.0A Peak Pulse Current

• Low Saturation Voltage VCE(sat) < 500mV @ 0.5A

• Epitaxial Planar Die Construction

• Complementary PNP types: BCX5316Q

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen- and Antimony-Free. "Green" Device (Note 3)

• The BCX5616Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.