MOSFET 2N-CH 30V 6.2A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 6.2 A | 2 W | 10.5 nC | 780 pF | 8-SO | 38 mOhm | 30 V | MOSFET (Metal Oxide) | 1 V | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Dual) | -55 °C | 150 °C | Surface Mount | Logic Level Gate |
Infineon Technologies | 6.2 A | 2 W | 10.5 nC | 780 pF | 8-SO | 38 mOhm | 30 V | MOSFET (Metal Oxide) | 1 V | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Dual) | -55 °C | 150 °C | Surface Mount | Logic Level Gate |
Infineon Technologies | 6.2 A | 2 W | 10.5 nC | 780 pF | 8-SO | 38 mOhm | 30 V | MOSFET (Metal Oxide) | 1 V | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Dual) | -55 °C | 150 °C | Surface Mount | Logic Level Gate |