DMTH61M5SPSWQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Grade	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Drain to Source Voltage (Vdss)
Diodes Inc DMTH61M5SPSWQ-13	PowerDI5060-8 (SWP)	20 V	Surface Mount	130.6 nC	225 A	N-Channel	Automotive	MOSFET (Metal Oxide)	3.2 W 167 W	4 V	8-PowerTDFN	-55 °C	175 ░C	10 V	1.5 mOhm	AEC-Q101	60 V

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production –Ensures More Reliable and Robust End Application

• High-Conversion Efficiency

• Low RDS(ON) – Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMTH61M5SPSWQ is suitable for automotiveapplications requiring specific change control; this part isAEC-Q101 qualified, PPAP capable, and manufactured inIATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and is supported by a PPAP.