Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 4.1 MOHM;
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 10 V | 6920 pF | 4 V | 170 nC | Through Hole | 75 V | TO-262 | -55 °C | 175 ░C | 300 W | 20 V | 4.1 mOhm | 120 A | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA |