IS41LV16100 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PARALLEL 42SOJ
| Part | Memory Type | Memory Format | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Memory Interface (Type) | Access Time | Memory Size | Package Length | Package Width | Memory Depth | Memory Width | Mounting Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 0 °C | 70 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 0 °C | 70 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 44-TSOP 44-TSOP II | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 42-BSOJ 42-SOJ | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 44-TSOP 44-TSOP II | Parallel | 25 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 °C | 85 °C | 42-BSOJ 42-SOJ | Parallel | 30 ns | 16 Mb | 10.16 mm | 10.16 mm | 1 M | 16 bit | Surface Mount | 3.6 V | 3 V | DRAM - EDO |