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DIODE SIL CARBIDE 650V 4A VSON-4
| Part | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Current - Average Rectified (Io) | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 70 µA | 0 ns | 1.7 V | 130 pF | 4 A | 4-PowerTSFN | 650 V | Surface Mount | SiC (Silicon Carbide) Schottky | 175 ░C | -55 C | No Recovery Time | PG-VSON-4 |