IR MOSFET™ N-CHANNEL SMALL POWER ; TSOP-6 PACKAGE; 2,2 OHM
| Part | FET Type | Mounting Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | Surface Mount | 2 W | 2.2 Ohm | 3.9 nC | 600 mA | Micro6™(TSOP-6) | 200 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 30 V | SOT-23-6 Thin TSOT-23-6 | 88 pF | 10 V | 5.5 V |