MBR600200 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MOD SCHOT 200V 300A 2TOWER
| Part | Current - Reverse Leakage | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) (per Diode) | Mounting Type | Technology | Diode Pair Count | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 3 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 200 V | 500 ns | 200 mA | 920 mV | 300 A | Chassis Mount | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | 3 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 200 V | 500 ns | 200 mA | 920 mV | 300 A | Chassis Mount | Schottky | 1 pair | Common Cathode |