MOSFET 2P-CH 20V 4.3A 8SO
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Configuration | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 22 nC | 4.3 A | 8-SO | 610 pF | MOSFET (Metal Oxide) | 2 W | 90 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 700 mV | 2 P-Channel | ||
Infineon Technologies | Surface Mount | Logic Level Gate | 22 nC | 4.3 A | 8-SO | 610 pF | MOSFET (Metal Oxide) | 2 W | 90 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 700 mV | 2 P-Channel | ||||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 4.3 A 5.2 A | 8-SO | MOSFET (Metal Oxide) | 2 W | 50 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 700 mV | N and P-Channel | 660 pF | 20 nC | ||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 4.3 A 5.2 A | 8-SO | MOSFET (Metal Oxide) | 2 W | 50 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 700 mV | N and P-Channel | 660 pF | 20 nC | ||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 3.6 A | 8-SO | 440 pF | MOSFET (Metal Oxide) | 2 W | 100 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 1 V | 2 P-Channel | 25 nC | ||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 22 nC | 4.3 A | 8-SO | 610 pF | MOSFET (Metal Oxide) | 2 W | 90 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 700 mV | 2 P-Channel | ||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 25 nC | 3 A 4 A | 8-SO | 520 pF | MOSFET (Metal Oxide) | 1.4 W | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 1 V | N and P-Channel | ||||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 5.2 A | 8-SO | MOSFET (Metal Oxide) | 2 W | 50 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 700 mV | 2 N-Channel (Dual) | 660 pF | 20 nC | ||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 4.9 A | 8-SO | 520 pF | MOSFET (Metal Oxide) | 2 W | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 1 V | 2 N-Channel (Dual) | 25 nC | ||||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 4.9 A | 8-SO | 520 pF | MOSFET (Metal Oxide) | 2 W | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 1 V | 2 N-Channel (Dual) | 25 nC |