SICFET N-CH 650V 27A D2PAK-7
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Qorvo UF3C065080B7S | 27 A | 25 V | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA | N-Channel | SiCFET (Cascode SiCJFET) | 760 pF | 23 nC | 6 V | Surface Mount | D2PAK-7 | 105 mOhm | 136.4 W | -55 °C | 175 ░C | 650 V | |||
Qorvo UF3C065080K3S | 31 A | 25 V | TO-247-3 | N-Channel | 6 V | Through Hole | TO-247-3 | 100 mOhm | 190 W | -55 °C | 175 ░C | 650 V | 51 nC | 1500 pF | 12 V, 12 V | |||
Qorvo UF3C065080T3S | 31 A | 25 V | TO-220-3 | N-Channel | 6 V | Through Hole | TO-220-3 | 100 mOhm | 190 W | -55 °C | 175 ░C | 650 V | 51 nC | 1500 pF | 12 V, 12 V |