TK60F10 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 100V 60A TO220SM
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature | Package / Case | Rds On (Max) | Mounting Type | Technology | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | FET Type | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Gate Charge (Max) | Qualification | Package Name | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 100 V | 205 W | 175 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 6.11 mOhm | Surface Mount | MOSFET (Metal Oxide) | 3.5 V | 4320 pF | 60 A | N-Channel | 6 V | 10 V | 60 nC | AEC-Q101 | TO-220SM(W) | Automotive |