MBR200200 Series

Catalog

DIODE MOD SCHOT 200V 100A 2TOWER

Part	Current - Reverse Leakage	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max)	Technology	Package / Case	Mounting Type	Diode Pair Count	Diode Configuration	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Voltage - DC Reverse (Vr) (Max)
GeneSiC Semiconductor MBR200200CT	3 mA	500 ns	200 mA	100 A	920 mV	Schottky	Twin Tower	Chassis Mount	1 pair	Common Cathode	150 °C	-55 °C	Twin Tower	200 V
GeneSiC Semiconductor MBR200200CTR	3 mA	500 ns	200 mA	100 A	920 mV	Schottky	Twin Tower	Chassis Mount	1 pair	Common Anode	150 °C	-55 °C	Twin Tower	200 V
GeneSiC Semiconductor MBR200200CT	3 mA	500 ns	200 mA	100 A	920 mV	Schottky	Twin Tower	Chassis Mount	1 pair	Common Cathode	150 °C	-55 °C	Twin Tower	200 V
GeneSiC Semiconductor MBR200200CTR	3 mA	500 ns	200 mA	100 A	920 mV	Schottky	Twin Tower	Chassis Mount	1 pair	Common Anode	150 °C	-55 °C	Twin Tower	200 V