DIODE GEN PURP 100V 6A R-6
| Part | Speed | Package / Case | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Capacitance @ Vr, F | Technology | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.3 V | 10 µA | R-6 | 150 °C | -65 C | Through Hole | 150 ns | 100 V | 6 A | 150 pF | Standard | |
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.2 V | 10 µA | R-6 | 125 °C | -65 C | Through Hole | 150 ns | 400 V | 6 A | 100 pF | Standard | |
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.2 V | 10 µA | R-6 | 125 °C | -65 C | Through Hole | 150 ns | 50 V | 6 A | 100 pF | Standard | |
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.2 V | 10 µA | R-6 | 125 °C | -65 C | Through Hole | 150 ns | 200 V | 6 A | 100 pF | Standard | |
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.2 V | 10 µA | R-6 | 125 °C | -65 C | Through Hole | 250 ns | 600 V | 6 A | 100 pF | Standard | |
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.2 V | 10 çA | R-6 | 125 °C | -65 C | Through Hole | 500 ns | 1000 V | 6 A | 100 pF | Standard | |
SMC Diode Solutions | 200 mA 500 ns | R-6 Axial | 1.3 V | 10 µA | R-6 | 150 °C | -65 C | Through Hole | 150 ns | 400 V | 6 A | 150 pF | Standard | |
SMC Diode Solutions | 200 mA | R-6 Axial | 1.3 V | 10 µA | R-6 | 150 °C | -65 C | Through Hole | 500 ns | 1000 V | 6 A | 150 pF | Standard | Standard Recovery >500ns |