MEMORY CIRCUIT, 256KX16, CMOS, PBGA48, 8 X 8 MM, 0.75 MM PITCH, ROHS COMPLIANT, FBGA-48
| Part | Access Time | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Write Cycle Time - Word, Page | Package / Case | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Mounting Type | Memory Organization | Memory Format | Supplier Device Package | Memory Size | Package / Case | Package / Case | Grade | Qualification | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Everspin Technologies Inc.  | 35 ns  | MRAM (Magnetoresistive RAM)  | 3.6 V  | 3 V  | 35 ns  | 48-LFBGA  | Parallel  | 105 °C  | -40 °C  | Non-Volatile  | Surface Mount  | 256 K  | RAM  | 48-FBGA (8x8)  | 512 kb  | ||||
Everspin Technologies Inc.  | 35 ns  | MRAM (Magnetoresistive RAM)  | 3.6 V  | 3 V  | 35 ns  | 44-TSOP  | Parallel  | 85 °C  | -40 °C  | Non-Volatile  | Surface Mount  | 256 K  | RAM  | 44-TSOP2  | 512 kb  | 10.16 mm  | 10.16 mm  | ||
Everspin Technologies Inc.  | 35 ns  | MRAM (Magnetoresistive RAM)  | 3.6 V  | 3 V  | 35 ns  | 48-LFBGA  | Parallel  | 105 °C  | -40 °C  | Non-Volatile  | Surface Mount  | 256 K  | RAM  | 48-FBGA (8x8)  | 512 kb  | ||||
Everspin Technologies Inc.  | 35 ns  | MRAM (Magnetoresistive RAM)  | 3.6 V  | 3 V  | 35 ns  | 44-TSOP  | Parallel  | 125 °C  | -40 °C  | Non-Volatile  | Surface Mount  | 256 K  | RAM  | 44-TSOP2  | 512 kb  | 10.16 mm  | 10.16 mm  | Automotive  | AEC-Q100  | 
Everspin Technologies Inc.  | 35 ns  | MRAM (Magnetoresistive RAM)  | 3.6 V  | 3 V  | 35 ns  | 44-TSOP  | Parallel  | 70 °C  | 0 °C  | Non-Volatile  | Surface Mount  | 256 K  | RAM  | 44-TSOP2  | 512 kb  | 10.16 mm  | 10.16 mm  |