MOSFET P-CH 40V 100A 8SOP
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) [Min] | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Operating Temperature | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage  | 230 nC  | 8-PowerVDFN  | 170 W  960 mW  | 40 V  | 2.1 V  | -20 V  | 10 V  | 9500 pF  | P-Channel  | 8-SOP Advance (5x5)  | 175 °C  | MOSFET (Metal Oxide)  | 100 A  | 3.1 mOhm  | Surface Mount  | 4.5 V  10 V  |