TP2104 Series

Catalog

POWER MOSFET, P CHANNEL, 40 V, 175 MA, 6 OHM, TO-92, THROUGH HOLE

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Mounting Type	Technology	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs (Max)	Package / Case	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tj)	Package Name	Drain to Source Voltage (Vdss)
Microchip Technology TP2104N3-G	60 pF	740 mW	Through Hole	MOSFET (Metal Oxide)	6 Ohm	-55 °C	150 °C	P-Channel	20 V	TO-226-3 TO-92-3 (TO-226AA)	2 V	10 V	4.5 V	175 mA	TO-92-3	40 V
Microchip Technology TP2104N3-G-P003	60 pF	740 mW	Through Hole	MOSFET (Metal Oxide)	6 Ohm	-55 °C	150 °C	P-Channel	20 V	TO-226-3 TO-92-3 (TO-226AA)	2 V	10 V	4.5 V	175 mA	TO-92-3	40 V
Microchip Technology TP2104K1-G	60 pF	360 mW	Surface Mount	MOSFET (Metal Oxide)	6 Ohm	-55 °C	150 °C	P-Channel	20 V	SC-59 SOT-23-3 TO-236-3	2 V	10 V	4.5 V	160 mA	TO-236AB (SOT23)	40 V