Catalog
Single N-Channel Power MOSFET 30V, 155A, 2.1mΩ
Key Features
• Low RDS(on)
• Low capacitance
• Optimized gate charge
Description
AI
This is a 30 V N-Channel Power MOSFET.
Single N-Channel Power MOSFET 30V, 155A, 2.1mΩ
| Part | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package Length | Package Name | Package Width | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Gate Charge (Max) | Package Leads | Technology | Vgs (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 4970 pF | 30 V | Surface Mount | 16 A | 155 A | 2.5 V | -55 °C | 150 °C | 5 mm | 5-DFN 8-PowerTDFN 8-SOFL | 6 mm | N-Channel | 10 V | 4.5 V | 2.1 mOhm | 71.3 nC | 5 Leads | MOSFET (Metal Oxide) | 20 V | 86.2 W 900 mW |
ON Semiconductor | 4970 pF | 30 V | Surface Mount | 16 A | 155 A | 2.5 V | -55 °C | 150 °C | 5 mm | 5-DFN 8-PowerTDFN 8-SOFL | 6 mm | N-Channel | 10 V | 4.5 V | 2.1 mOhm | 71.3 nC | 5 Leads | MOSFET (Metal Oxide) | 20 V | 86.2 W 900 mW |