N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
| Part | Current - Continuous Drain (Id) (Ta) (2) | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Package / Case | Rds On (Max) | Technology | FET Feature | Channel Count | Configuration | Configuration - Features | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Package Name | Power - Max (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2 A | 26 A | 27.3 nC | 8-LFPAK56 SOT-1205 | 31 mOhm | MOSFET (Metal Oxide) | Logic Level Gate | 2 | N-Channel | Dual | -55 °C | 175 °C | 3168 pF 3168 pF | Surface Mount | 2.1 V | 100 V | LFPAK56D | 64 W |