20ETF12 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO263AB
| Part | Current - Reverse Leakage | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package Name | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Voltage - Forward (Vf) (Max) | Package / Case | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Technology | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-263AB (D2PAK) | 20 A | 95 ns | -40 °C | 150 °C | 1.31 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1200 V | Surface Mount | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-220-2 Full Pack | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | TO-220-2 Full Pack | 1200 V | Through Hole | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-263AB (D2PAK) | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1200 V | Surface Mount | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-220AC | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | TO-220-2 | 1200 V | Through Hole | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-220AC | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | TO-220-2 | 1200 V | Through Hole | Standard | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-263AB (D2PAK) | 20 A | 95 ns | -40 °C | 150 °C | 1.31 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1200 V | Surface Mount | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-263AB (D2PAK) | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1200 V | Surface Mount | Standard | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-220AC | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | TO-220-2 | 1200 V | Through Hole | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-263AB (D2PAK) | 20 A | 400 ns | -40 °C | 150 °C | 1.31 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1200 V | Surface Mount | Standard | ||
Vishay General Semiconductor - Diodes Division | 100 µA | 500 ns | 200 mA | TO-220AC | 20 A | 400 ns | -40 °C | 150 °C | 1.3 V | TO-220-2 | 1200 V | Through Hole | Standard |