IGBT DISCRETES
| Part | Test Condition | Reverse Recovery Time (trr) | Td (on/off) @ 25°C | Gate Charge | Vce(on) (Max) @ Vge, Ic | Operating Temperature [Min] | Operating Temperature [Max] | IGBT Type | Power - Max [Max] | Switching Energy | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 Ohm 15 V 24 A 400 V | 89 ns | 41 ns 104 ns | 50 nC | 1.95 V | -55 °C | 175 ░C | Trench | 250 W | 115 µJ 600 µJ | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V | Surface Mount | 96 A |