IC DRAM 256MBIT PAR 90VFBGA
Part | Access Time | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Supplier Device Package | Memory Format | Memory Interface | Technology | Memory Organization | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Write Cycle Time - Word, Page | Memory Type | Memory Size | Clock Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W988D2FBJX6E TR | 5.4 ns | -25 °C | 85 °C | 90-TFBGA | 90-VFBGA (8x13) | DRAM | Parallel | SDRAM - Mobile LPSDR | 8M x 32 | 1.95 V | 1.7 V | Surface Mount | 15 ns | Volatile | 256 Gbit | 166 MHz |
Winbond Electronics W988D2FBJX6E | 5.4 ns | -25 °C | 85 °C | 90-TFBGA | 90-VFBGA (8x13) | DRAM | Parallel | SDRAM - Mobile LPSDR | 8M x 32 | 1.95 V | 1.7 V | Surface Mount | 15 ns | Volatile | 256 Gbit | 166 MHz |
Winbond Electronics W988D2FBJX7E | 5.4 ns | -25 °C | 85 °C | 90-TFBGA | 90-VFBGA (8x13) | DRAM | Parallel | SDRAM - Mobile LPSDR | 8M x 32 | 1.95 V | 1.7 V | Surface Mount | 15 ns | Volatile | 256 Gbit | 133 MHz |
Winbond Electronics W988D2FBJX7E TR | 5.4 ns | -25 °C | 85 °C | 90-TFBGA | 90-VFBGA (8x13) | DRAM | Parallel | SDRAM - Mobile LPSDR | 8M x 32 | 1.95 V | 1.7 V | Surface Mount | 15 ns | Volatile | 256 Gbit | 133 MHz |
Winbond Electronics W988D2FBJX6I | 5.4 ns | -40 °C | 85 °C | 90-TFBGA | 90-VFBGA (8x13) | DRAM | Parallel | SDRAM - Mobile LPSDR | 8M x 32 | 1.95 V | 1.7 V | Surface Mount | 15 ns | Volatile | 256 Gbit | 166 MHz |
Winbond Electronics W988D2FBJX6I TR | 5.4 ns | -40 °C | 85 °C | 90-TFBGA | 90-VFBGA (8x13) | DRAM | Parallel | SDRAM - Mobile LPSDR | 8M x 32 | 1.95 V | 1.7 V | Surface Mount | 15 ns | Volatile | 256 Gbit | 166 MHz |