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MOSFET N-CH 650V 21A TO262-3
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.5 V | 192 W | 21 A | 2000 pF | 650 V | 165 mOhm | Through Hole | PG-TO262-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 52 nC | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 20 V |