Beta
⌘K
MOSFET P-CH 20V 4A SOT23F
| Part | Drive Voltage (Max Rds On, Min Rds On) | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Package / Case | Supplier Device Package | Vgs (Max) [Max] | Vgs (Max) [Min] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.5 V 4.5 V | MOSFET (Metal Oxide) | 630 pF | P-Channel | 20 V | 1 W | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 6 V | -8 V | 4 A | 1 V | 150 °C | 55 mOhm | 10.4 nC |