IC FLASH 1GBIT PARALLEL 56TSOP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Technology | Supplier Device Package | Memory Format | Memory Interface | Memory Type | Mounting Type | Memory Size | Access Time | Write Cycle Time - Word, Page | Voltage - Supply [Min] | Voltage - Supply [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. JS28F00AM29EBHB TR | 85 °C | -40 °C | 128M x 8, 64M x 16 | FLASH - NOR | 56-TSOP | FLASH | Parallel | Non-Volatile | Surface Mount | 1 Mbit | 110 ns | 110 ns | 2.7 V | 3.6 V |
Micron Technology Inc. JS28F00AM29EWHE | 85 °C | -40 °C | 128M x 8, 64M x 16 | FLASH - NOR | 56-TSOP | FLASH | Parallel | Non-Volatile | Surface Mount | 1 Mbit | 110 ns | 110 ns | 2.7 V | 3.6 V |
Micron Technology Inc. JS28F00AM29EWH0 | 85 °C | -40 °C | 128M x 8, 64M x 16 | FLASH - NOR | 56-TSOP | FLASH | Parallel | Non-Volatile | Surface Mount | 1 Mbit | 110 ns | 110 ns | 2.7 V | 3.6 V |
Micron Technology Inc. JS28F00AM29EWLA | 85 °C | -40 °C | 128M x 8, 64M x 16 | FLASH - NOR | 56-TSOP | FLASH | Parallel | Non-Volatile | Surface Mount | 1 Mbit | 110 ns | 110 ns | 2.7 V | 3.6 V |
Micron Technology Inc. JS28F00AM29EWHB TR | 85 °C | -40 °C | 128M x 8, 64M x 16 | FLASH - NOR | 56-TSOP | FLASH | Parallel | Non-Volatile | Surface Mount | 1 Mbit | 110 ns | 110 ns | 2.7 V | 3.6 V |