IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Channel Type | Number of Drivers | Supplier Device Package | Gate Type | Package / Case | Package / Case | Package / Case | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Driven Configuration | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 5 V | 20 V | 0.8 V 2.9 V | 600 V | 150 °C | -40 °C | Synchronous | 2 | 8-PDIP | IGBT N-Channel MOSFET | 0.3 in | 8-DIP | 7.62 mm | 130 ns | 50 ns | Non-Inverting | Half-Bridge | ||
Infineon Technologies | Surface Mount | 5 V | 20 V | 0.8 V 2.9 V | 600 V | 150 °C | -40 °C | Synchronous | 2 | 8-SOIC | IGBT N-Channel MOSFET | 8-SOIC | 130 ns | 50 ns | Non-Inverting | Half-Bridge | 3.9 mm | 0.154 in | ||
Infineon Technologies | Surface Mount | 5 V | 20 V | 0.8 V 2.9 V | 600 V | 150 °C | -40 °C | Synchronous | 2 | 8-SOIC | IGBT N-Channel MOSFET | 8-SOIC | 130 ns | 50 ns | Non-Inverting | Half-Bridge | 3.9 mm | 0.154 in |