DIODE SIL CARB 650V 13.5A TO252
| Part | Capacitance @ Vr, F | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Speed | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed C3D04065E | 251 pF | TO-252-2 | 175 ░C | -55 C | 650 V | Surface Mount | 13.5 A | 60 µA | 1.8 V | 0 ns | No Recovery Time | SiC (Silicon Carbide) Schottky | DPAK (2 Leads + Tab), SC-63, TO-252-3 |
Wolfspeed C3D04065A | 251 pF | TO-220-2 | 175 ░C | -55 C | 650 V | Through Hole | 13.5 A | 60 µA | 1.8 V | 0 ns | No Recovery Time | SiC (Silicon Carbide) Schottky | TO-220-2 |
Wolfspeed C3D04065E-TR | 251 pF | TO-252-2 | 175 ░C | -55 C | 650 V | Surface Mount | 13.5 A | 60 µA | 1.8 V | 0 ns | No Recovery Time | SiC (Silicon Carbide) Schottky | DPAK (2 Leads + Tab), SC-63, TO-252-3 |