MOSFET 4N-CH 90V 0.4A 14DIP
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Configuration | FET Feature | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix VQ1006P-2 | -55 °C | 150 °C | 2.5 V | 2 W | 400 mA | 60 pF | 4.5 Ohm | 4 N-Channel | Logic Level Gate | 14-DIP | 90 V | MOSFET (Metal Oxide) | Through Hole |
Vishay Siliconix VQ1006P | -55 °C | 150 °C | 2.5 V | 2 W | 400 mA | 60 pF | 4.5 Ohm | 4 N-Channel | Logic Level Gate | 14-DIP | 90 V | MOSFET (Metal Oxide) | Through Hole |