MOSFET 2N-CH 30V 7.8A/8.9A 8SO
| Part | Rds On (Max) @ Id, Vgs | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 21.8 mOhm | 2 N-Channel (Dual) | 600 pF | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | MOSFET (Metal Oxide) | 8-SO | 2.25 V | 30 V | 7.8 A 8.9 A | -55 °C | 150 °C | 6.9 nC | 2 W |
Infineon Technologies | 21.8 mOhm | 2 N-Channel (Dual) | 600 pF | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | MOSFET (Metal Oxide) | 8-SO | 2.25 V | 30 V | 7.8 A 8.9 A | -55 °C | 150 °C | 6.9 nC | 2 W |