MOSFET N-CH 40V 195A D2PAK
| Part | FET Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | D2PAK | -55 °C | 175 ░C | 294 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 324 nC | 10 V | 20 V | 10820 pF | 195 A | 1.6 mOhm | 3.9 V | 40 V | Surface Mount | |
Infineon Technologies | N-Channel | PG-TO263-7-900 | -55 °C | 175 ░C | 294 W | D2PAK TO-263-7 TO-263CB | MOSFET (Metal Oxide) | 315 nC | 10 V | 20 V | 10250 pF | 240 A | 3.9 V | 40 V | Surface Mount | 1 mOhm |