DMN2025UFDB Series

Dual 20V N-Channel Enhancement Mode MOSFET

Catalog

Dual 20V N-Channel Enhancement Mode MOSFET

Part	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN2025UFDB-13	700 mW	Surface Mount	1 V	6 A	486 pF	U-DFN2020-6 (Type B)	25 mOhm	-55 °C	150 °C	6-UDFN Exposed Pad	20 V	2 N-Channel (Dual)	12.3 nC	MOSFET (Metal Oxide)
Diodes Inc DMN2025U		Surface Mount	900 mV	5.6 A		SOT-23-3	27 mOhm	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	20 V			MOSFET (Metal Oxide)	12 V	N-Channel	485 pF	5.9 nC	800 mW	1.8 V 4.5 V
Diodes Inc DMN2025U-7		Surface Mount	900 mV	5.6 A		SOT-23-3	27 mOhm	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	20 V			MOSFET (Metal Oxide)	12 V	N-Channel	485 pF	5.9 nC	800 mW	1.8 V 4.5 V
Diodes Inc DMN2025U-13

Catalog

Dual 20V N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.