PSMN6R1 Series

N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Catalog

N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Part	Power - Max (Ta)	Rds On (Max)	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	FET Feature	Vgs(th) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Configuration - Features	Package Name	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Vgs (Max)
Nexperia USA Inc. PSMN6R1-40HLX	64 W	6.1 mOhm	22.2 nC	Surface Mount	3000 pF	Logic Level Gate	2.1 V	8-LFPAK56 SOT-1205	-55 °C	175 °C	2	N-Channel	Dual	LFPAK56D	MOSFET (Metal Oxide)	40 V	40 A
Nexperia USA Inc. PSMN6R1-25MLDX		7.24 mOhm	10.7 nC	Surface Mount	702 pF	Schottky Diode (Body)	2.2 V	8-LFPAK33 (5-Lead) SOT-1210	-55 °C	175 °C				LFPAK33	MOSFET (Metal Oxide)	25 V		N-Channel	60 A	10 V	4.5 V	42 W	20 V
Nexperia USA Inc. PSMN6R1-30YLDX		6 mOhm	13.6 nC	Surface Mount	817 pF		2.2 V	SC-100 SOT-669	-55 °C	175 °C				LFPAK56 Power-SO8	MOSFET (Metal Oxide)	30 V		N-Channel	66 A	10 V	4.5 V	47 W	20 V

Catalog

N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.