IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 4.5 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 mOhm | TO-252AA (DPAK) | 140 A | 50 nC | 140 W | 30 V | 4.5 V 10 V | -55 °C | 175 ░C | 2.3 V | MOSFET (Metal Oxide) | N-Channel | 4010 pF | 20 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 |