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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package / Case | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Power Dissipation (Max) | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Mounting Type | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Rds On (Max) | Package Name | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 270 mA | 900 mV | 1.3 W 270 mW | N-Channel | 4.5 V | 1.5 V | MOSFET (Metal Oxide) | Surface Mount | 0.7 nC 0.7 nC | -55 °C | 150 °C | 60 V | 8 V | 2.8 Ohm | TO-236AB | 27 pF |