SICB1060 Series

Catalog

DIODE SIL CARBIDE 650V 10A D2PAK

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Capacitance	Voltage - DC Reverse (Vr) (Max)	Package / Case	Package Name	Current - Reverse Leakage	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max)	Mounting Type	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Technology	Current - Average Rectified (Io)
MCC (Micro Commercial Components) SICB1060P-TP	175 °C	-55 °C	36 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	44 µA	0 ns	1.6 V	Surface Mount	500 mA	No Recovery Time	500 mA 500 mA	SiC (Silicon Carbide) Schottky	10 A
MCC (Micro Commercial Components) SICB1060P-TP	175 °C	-55 °C	36 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	44 µA	0 ns	1.6 V	Surface Mount	500 mA	No Recovery Time	500 mA 500 mA	SiC (Silicon Carbide) Schottky	10 A