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MOSFET N-CH 650V 12A TO220-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | 250 mOhm | 104 W | 20 V | 3.5 V | N-Channel | PG-TO220-3 | 650 V | TO-220-3 | 35 nC | 12 A | 1200 pF | 10 V |