Catalog
Nch 60V 100A, TO-263AB, Power MOSFET
Description
AI
RJ1L04BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
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Nch 60V 100A, TO-263AB, Power MOSFET
Nch 60V 100A, TO-263AB, Power MOSFET
| Part | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Mounting Type | Vgs (Max) | Operating Temperature | Power Dissipation (Max) | Technology | Gate Charge (Max) | FET Type | Package / Case | Package Name | Rds On (Max) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2950 pF | 60 V | 10 V | 4.5 V | 2.5 V | Surface Mount | 20 V | 150 °C | 89 W | MOSFET (Metal Oxide) | 47 nC | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263AB | 4.6 mOhm | 40 A |