Catalog
NRND = Not Recommended for New Design
Key Features
• 9.0 to 18V operating input voltage
• Integrated NMOS power device with RDS(ON)of 30mΩ typical
• Internal current limit - no external current sense resistor in load path
• Under voltage lockout
• Over voltage clamp (NIS5132MN1 and NIS5132MN2)
• Thermal shutdown
-40°C to +150°C operating junction temperature
• ESD ratings : HBM ＞ 1500V; MM 200V
• Small low profile U-DFN3030-10 packages
• Lead-Free Finish; RoHS Compliant
• Halogen and Antimony Free. "Green" Device
Description
AI
TN1.pdf