Beta
⌘K
TRANS 2PNP PREBIAS 0.1W ES6
| Part | Frequency - Transition | Transistor Type | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Power - Max [Max] | Supplier Device Package | Package / Case | Current - Collector (Ic) (Max) [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 200 MHz | 2 PNP - Pre-Biased (Dual) | 100 nA | 80 | 47000 Ohms | 100 mW | ES6 | SOT-563 SOT-666 | 100 mA | Surface Mount | 50 V | 300 mV |